DTC144TE npn digital transistor features ? built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit) ? the bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. they also have the advantage of almost completely eliminating parasitic effects ? only the on/off conditions need to be set for operation, making device design easy absolute maximum ratings parameter symbol value unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current-continuous i c 100 ma collector dissipation p c 150 mw junction temperature t j 150 storage temperature range t stg -55~150 electrical characteristics sym parameter min typ max unit v (br)cbo collector-base breakdown voltage (i c =50ua, i e =0) 50 --- --- v v (br)ceo collector-emitter breakdown voltage (i c =1ma, i b =0) 50 --- --- v v (br)ebo emitter-base breakdown voltage (i e =50ua, i c =0) 5 --- --- v i cbo collector cut-off current (v cb =50v, i e =0) --- --- 0.5 ua i ebo emitter cut-off current (v eb =4v, i c =0) h fe dc current gain (v ce =5v, i c =1ma) 100 300 600 --- v ce(sat) collector-emitter saturation voltage (i c =10ma, i b =1ma) --- --- 0.3 v f t transition frequency (v ce =10v, i c =-5ma, f=100mhz) --- 250 --- mhz
omponents 20736 marilla street chatsworth !"# $
% !"# mcc www. mccsemi .com revision: 1 2005 /06/29 --- - - - 0.5 ua r 1 input resistance 32.9 47 61 . 1 k sot-523 inches mm dim min max min max note a .059 .067 1.50 1.70 b .030 .033 0.75 0.85 c .057 .069 1.45 1.75 d .020 nominal 0.50nominal e .035 .043 0.90 1.10 g .000 .004 .000 .100 h .028 .031 .70 0.80 j .004 .008 .100 .200 k .010 .014 .25 .35 a c b d e g h j dimensions k 3 1 2 1. base 2. emitter 3. collector tm micro commercial components
www. mccsemi .com revision: 1 2005/06/2 9 DTC144TE mcc tm micro commercial components
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